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CM600DU-24F
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMODTM F-Series Module
600 Amperes/1200 Volts
A B F C L M TC MEASURED POINT G T - (4 TYP.) N R
Z
G2
E2
P C L Q
E2
C1
CE AA
X
E1 G1
Y P W(4 PLACES) S - (3 PLACES) L K J H
LABEL
C2E1
V U
D
G2 E2 RTC C2E1 E2 RTC E1 G1 C1
Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
Millimeters 14.5 40.0 65.0 M8 6.5 Dia. 8.0
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M N Inches 5.51 5.12 5.12 1.38 +0/-0.02 4.330.01 4.330.01 0.39 0.45 0.54 1.72 1.42 0.39 0.80 Millimeters 140.0 130.0 130.0 35.0 +0/-0.5 110.00.25 110.00.25 10.0 11.5 13.8 43.8 36.0 10.0 20.4 Dimensions P Q R S T U V W X Y Z AA Inches 0.57 1.57 2.56 M8 0.26 Dia. 0.32
Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM600DU-24F is a 1200V (VCES), 600 Ampere Dual IGBTMODTM Power Module.
Type CM Current Rating Amperes 600 VCES Volts (x 50) 24
0.97 +0.04/-0.02 24.5 +1.0/-0.5 M4 0.59 0.35 1.02 0.79 M4 15.0 9.0 26.0 20.0
1
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODTM F-Series Module 600 Amperes/1200 Volts
Absolute Maximum Ratings, Tj = 25 C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M8 Main Terminal Mounting Torque, M6 Mounting G(E) Terminal, M4 Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - - Viso CM600DU-24F -40 to 150 -40 to 125 1200 20 600 1200* 600 1200* 1540 95 40 15 1200 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts
Static Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25C IC = 600A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. - - 5.0 - - - - Typ. - - 6 1.95 2.05 6600 - Max. 2 80 7.0 2.55 - - 3.35 Units mA A Volts Volts Volts nC Volts
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODTM F-Series Module 600 Amperes/1200 Volts
Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 1.0 , Inductive Load Switching Operation IE = 600A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 43.2 Max. 230 10 6 450 200 800 300 500 - Units nf nf nf ns ns ns ns ns C
Diode Reverse Recovery Time* Diode Reverse Recovery Charge*
Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)R Rth(j-c')Q Rth(c-f) RG Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance Per IGBT 1/2 Module Tc Reference Point Under Chips Contact Thermal Resistance External Gate Resistance Per Module, Thermal Grease Applied - 1.0 0.010 - - 52 C/W - - 0.032** C/W - - 0.11 C/W Min. - Typ. - Max. 0.081 Units C/W
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). **If you use this value, Rth(f-a) should be measured just under the chips.
3
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600DU-24F Dual IGBTMODTM F-Series Module 600 Amperes/1200 Volts
OUTPUT CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
1200
COLLECTOR CURRENT, IC, (AMPERES)
VGE = 20V
9.5 9
2.5 2.0 1.5 1.0 0.5 0
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
Tj = 25oC
15 11 10
3.0
VGE = 15V Tj = 25C Tj = 125C
5
Tj = 25C
4 3
IC = 1200A
800
8.5
2 1
IC = 600A IC = 240A
400
8
0 0 1 2 3 4
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 0 300 600 900 1200 0 6 8 10 12 14 16 18 20
COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
104
Tj = 25C
CAPACITANCE, Cies, Coes, Cres, (nF)
EMITTER CURRENT, IE, (AMPERES)
103
VGE = 0V
104
td(off) tf td(on)
Cies
103
102
SWITCHING TIME, (ns)
103
102
tr VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive Load
102
101
Coes Cres
101
101 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
100 10-1
100
101
102
100 101
102
COLLECTOR CURRENT, IC, (AMPERES)
103
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive Load
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi)
103
REVERSE RECOVERY TIME, trr, (ns)
103
20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
10-3 101
10-2
10-1
100
101
IC = 600A
trr Irr
16 12 8 4
VCC = 400V VCC = 600V
100
Per Unit Base Rth(j-c) = 0.081C/W (IGBT) Rth(j-c) = 0.11 C/W (FWDi) Single Pulse TC = 25C
102
102
10-1
10-1
10-2
10-2
101 101
102
EMITTER CURRENT, IE, (AMPERES)
101 103
0 0 2000 4000 6000 8000 10000
GATE CHARGE, QG, (nC)
10-3 10-5
TIME, (s)
10-4
10-3 10-3
4

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